Texas Instruments TI-Nspire CM (Chinese Language - Engineering Validation Tests 1)

Date of introduction:  Never Display technology:  LCD dot matrix
 16-bit color, backlit
New price:   Display size:  240 * 320 pixels 
Size:  7.5" x 3.4" x 0.65"
 190 x 87 x 16 mm3
Weight:  8.5 ounces, 204 grams Serial No:  EVT1-217 
Batteries:  3.7L0800SP Li-Ion Date of manufacture:  mth 02 year 2011
AC-Adapter:   Origin of manufacture:  China
Precision:  14 Integrated circuits:  CPU: ET-LC2010B-0 (T6UJ1XBG-0002)
 SDRAM and Flash MCP: Samsung K511F57ACC
Program steps:  32M Bytes, 100M Bytes Flash ROM Courtesy of:  Joerg Woerner

This TI-Nspire CM (Chinese Language) with the serial number EVT1-217 was used for Engineering Validation Tests (EVT - learn more about the Five Engineering Stages) of the later TI-Nspire CM-C.

Dismantling this TI-Nspire CM EVT1 manufactured already in February 2011 by Inventec Corporation in its Pudong Campus in Shanghai, China reveals a design similar to the original TI-Nspire CX centered around a tiny System-on-Chip. Learn more about the Hardware Architecture of TI’s Graphing Calculators

Processor: The ARM9 CPU is integrated into an ASIC with the markings ET-LC2010B-0 (T6UJ1XBG-0002), obviously from Toshiba, Japan. The ARM9 core is clocked with 132 MHz compared to the 90 MHz of the previous TI-Nspire. Learn more about the Hardware Architecture of TI’s Graphing Calculators. Based on observations from the original TI-Nspire and the recently discovered Revision W (NSC CR IV), we assume that the ASIC incorporates a ROM with a capacity of 128k Bytes used for the first-stage bootloader ("Boot 1") and a SRAM with a capacity of 128k Bytes.

Memory: Both the NAND Flash-ROM and the SDRAM with are integrated into a Multichip Package with the part designation Samsung K511F57ACC-B075. Deciphering the part number reveals the capacity of the Flash-ROM (128M Bytes) and SDRAM (16M x 16 bits):

• Product Family K5 = Samsung MCP (2 chips)
• Device Type 1 = NAND Flash Rom + Mobile SDR
• NAND Flash Density, Organization 1F = 1 Gbit, x8
• RAM Density, Organization 57 = 256 Mbit, x16
• Operating Voltage A = 1.8V NAND, 1.8V DRAM
• Flash Block Architecture C = Uniform block
• Version C = 4th Generation
• Package Type B = FBGA
• NAND Flash Speed 0 = None
• RAM Speed 75 = 7.5 ns (133MHz@CL3)


• TI-Nspire CM EVT1

3.1.0 DEVBUILD (February 2011)
Boot1 Code Version: 3.0.99
Boot2 Code Version: 3.10.0

You can check the ROM version of your TI-Nspire CM-C using the following key sequence and reading the number on your screen:

[HOME] [5] [4] (3.0)

Exam acceptance:

Since the TI-Nspire CM-C lacks a QWERTY keyboard it is permitted (as of May 30, 2013) for use on SAT, ACT, PSAT and AP exams.


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© Joerg Woerner, May 30, 2013. No reprints without written permission.